Dielectric, magnetic and structural properties of novel multiferroic Eu_0.5Ba_0.5TiO₃ ceramicsGOIAN, V; KAMBA, S; GREGORA, I et al.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 2, issn 0953-8984, 025904.1-025904.7Article

Effect of hydrogen passivation on polycrystalline silicon thin filmsHONDA, S; MATES, T; LEDINSKY, M et al.Thin solid films. 2005, Vol 487, Num 1-2, pp 152-156, issn 0040-6090, 5 p.Conference Paper

Enhancing nanocrystalline diamond surface conductivity by deposition temperature and chemical post-processingKOZAK, H; KROMKA, A; LEDINSKY, M et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 2, pp 276-280, issn 1862-6300, 5 p.Article

How nanocrystalline diamond films become charged in nanoscaleVERVENIOTIS, E; KROMKA, A; LEDINSKY, M et al.Diamond and related materials. 2012, Vol 24, pp 39-43, issn 0925-9635, 5 p.Article

Ultrasharp Si nanowires produced by plasma-enhanced chemical vapor depositionCERVENKA, J; LEDINSKY, M; STUCHLIKOVA, H et al.Physica status solidi. Rapid research letters (Print). 2010, Vol 4, Num 1-2, pp 37-39, issn 1862-6254, 3 p.Article

Electrochemical synthesis and electronic properties of polypyrrole on intrinsic diamondCERMAK, J; REZEK, B; KROMKA, A et al.Diamond and related materials. 2009, Vol 18, Num 9, pp 1098-1101, issn 0925-9635, 4 p.Article

Microcrystalline silicon, grain boundaries and role of oxygenKOCKA, J; STUCHLIKOVA, H; LEDINSKY, M et al.Solar energy materials and solar cells. 2009, Vol 93, Num 8, pp 1444-1447, issn 0927-0248, 4 p.Article

Illumination-induced charge transfer in polypyrrole-diamond nanosystemCERMAK, J; KROMKA, A; LEDINSKY, M et al.Diamond and related materials. 2009, Vol 18, Num 5-8, pp 800-803, issn 0925-9635, 4 p.Conference Paper

A simple quality factor for characterization of thin silicon filmsKOCKA, J; MATES, T; LEDINSKY, M et al.Journal of non-crystalline solids. 2008, Vol 354, Num 19-25, pp 2227-2230, issn 0022-3093, 4 p.Conference Paper

Properties of thin film silicon, prepared at high growth rate in a wide range of thicknessesKOCKA, J; MATES, T; LEDINSKY, M et al.Journal of non-crystalline solids. 2008, Vol 354, Num 19-25, pp 2451-2454, issn 0022-3093, 4 p.Conference Paper

Microcrystalline silicon prepared at magnetic field modified nucleationKOCKA, J; MATES, T; LEDINSKY, M et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 901-905, issn 0022-3093, 5 p.Conference Paper

Local electrostatic charging differences of sub-100 nm nanocrystalline diamond filmsVERVENIOTIS, E; CERMAK, J; KROMKA, A et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 9, pp 2040-2044, issn 1862-6300, 5 p.Conference Paper

Relation of nanoscale and macroscopic properties of mixed-phase silicon thin filmsFEJFAR, A; VETUSHKA, A; KALUSOVA, V et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 3, pp 582-586, issn 1862-6300, 5 p.Conference Paper

Detecting sp² phase on diamond surfaces by atomic force microscopy phase imaging and its effects on surface conductivityKOZAK, H; KROMKA, A; UKRAINTSEV, E et al.Diamond and related materials. 2009, Vol 18, Num 5-8, pp 722-725, issn 0925-9635, 4 p.Conference Paper

The basket plate in the osteosynthesis of comminuted fractures of distal pole of the patellaMATEJCIE, A; SMILJANIE, B; BEKAVAC-BESLIN, M et al.Injury. 2006, Vol 37, Num 6, pp 525-530, issn 0020-1383, 6 p.Article

Formation of microcrystalline silicon at low temperatures and role of hydrogenKOCKA, J; MATES, T; RO, K et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 287-290, issn 0022-3093, 4 p.Conference Paper

Thin silicon films deposited at low substrate temperatures studied by surface photovoltage techniqueLUTEROVA, K; SVRCEK, V; MATES, T et al.Thin solid films. 2004, Vol 451-52, pp 408-412, issn 0040-6090, 5 p.Conference Paper

Phagocytic functions of salivary neutrophils in oral mucous membrane diseasesLUKAC, J; MRAVAK-STIPETIC, M; KNEZEVIC, M et al.Journal of oral pathology & medicine. 2003, Vol 32, Num 5, pp 271-274, issn 0904-2512, 4 p.Article

Conductive atomic force microscopy on carbon nanowallsVETUSHKA, A; ITOH, T; NAKANISHI, Y et al.Journal of non-crystalline solids. 2012, Vol 358, Num 17, pp 2545-2547, issn 0022-3093, 3 p.Conference Paper

Seeding of polymer substrates for nanocrystalline diamond film growthKROMKA, A; BABCHENKO, O; KOZAK, H et al.Diamond and related materials. 2009, Vol 18, Num 5-8, pp 734-739, issn 0925-9635, 6 p.Conference Paper

A simple tool for quality evaluation of the microcrystalline silicon prepared at high growth rateKOCKA, J; MATES, T; LEDINSKY, M et al.Thin solid films. 2008, Vol 516, Num 15, pp 4966-4969, issn 0040-6090, 4 p.Article

Crystallinity of the mixed phase silicon thin films by Raman spectroscopyLEDINSKY, M; VETUSHKA, A; STUCHLIK, J et al.Journal of non-crystalline solids. 2008, Vol 354, Num 19-25, pp 2253-2257, issn 0022-3093, 5 p.Conference Paper

Controlled growth of nanocrystalline silicon on permalloy micro-patternsKOCKA, J; MATES, T; LEDINSKY, M et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 88, Num 4, pp 797-800, issn 0947-8396, 4 p.Article

Applications of intense ultra-short XUV pulses to solid state physics : Time-resolved luminescence spectroscopy and radiation damage studiesDE GRAZIA, M; MERDJI, H; BABIN, V et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65860I.1-65860I.10, issn 0277-786X, isbn 978-0-8194-6714-0, 1VolConference Paper

Defects generation by hydrogen passivation of polycrystalline silicon thin filmsHONDA, S; MATES, T; PERINA, V et al.Solar energy. 2006, Vol 80, Num 6, pp 653-657, issn 0038-092X, 5 p.Conference Paper